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Color-Tunable and Phosphor-Free White-Light Multilayered Light-Emitting Diodes

Identifieur interne : 001045 ( Main/Repository ); précédent : 001044; suivant : 001046

Color-Tunable and Phosphor-Free White-Light Multilayered Light-Emitting Diodes

Auteurs : RBID : Pascal:13-0118052

Descripteurs français

Pascal (Inist)
- Circuit accordable, Lumière blanche, Diode électroluminescente, Empilement, Microcâblage, Interconnexion, Microusinage, Micromachine, Température couleur, Evaluation performance, Caractéristique thermique, Mesure température, Matériau luminescent, Multicouche, Oxyde d'aluminium, Composé ternaire, Nitrure de gallium, Nitrure d'indium, Circuit intégré, Fabrication microélectronique, Al2O3, InGaN.

English descriptors

KwdEn :
- Aluminium oxide, Color temperature, Gallium nitride, Indium nitride, Integrated circuit, Interconnection, Light emitting diode, Luminescent material, Microelectronic fabrication, Micromachine, Micromachining, Multiple layer, Performance evaluation, Stacking, Temperature measurement, Ternary compound, Thermal characteristic, Tunable circuit, White light, Wire bonding.

Abstract

A tightly integrated 3-D RGB light-emitting diode (LED) stack is demonstrated. Chips of identical dimensions are stacked on top of each other, with wire bonds embedded within. This is achieved by integrating laser-micromachined channels onto the sapphire face of InGaN LEDs, serving to accommodate wire bonds from the chip beneath. The resultant structure eliminates leakage of monochromatic light from individual chips, producing optimally mixed emission through the top aperture. The device can emit a wide range of colors and is an efficient phosphor-free white-light LED as well. When emitting at correlated color temperatures (CCTs) of 2362 K, 5999 K, and 7332 K, the device generates ∼20 lm/W, exhibiting performance invariant of CCT. Thermal characteristics of this multilayered device are investigated via infrared thermometry.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 001128

Links to Exploration step

Pascal:13-0118052

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Color-Tunable and Phosphor-Free White-Light Multilayered Light-Emitting Diodes</title>
<author><name sortKey="Cheung, Y F" uniqKey="Cheung Y">Y. F. Cheung</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Electronic Engineering, The University of Hong Kong</s1>
<s2>Hong Kong</s2>
<s3>HKG</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Hong Kong</country>
<wicri:noRegion>Hong Kong</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Choi, H W" uniqKey="Choi H">H. W. Choi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Electronic Engineering, The University of Hong Kong</s1>
<s2>Hong Kong</s2>
<s3>HKG</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Hong Kong</country>
<wicri:noRegion>Hong Kong</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0118052</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0118052 INIST</idno>
<idno type="RBID">Pascal:13-0118052</idno>
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<idno type="wicri:Area/Main/Repository">001045</idno>
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<seriesStmt><idno type="ISSN">0018-9383</idno>
<title level="j" type="abbreviated">IEEE trans. electron devices</title>
<title level="j" type="main">I.E.E.E. transactions on electron devices</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium oxide</term>
<term>Color temperature</term>
<term>Gallium nitride</term>
<term>Indium nitride</term>
<term>Integrated circuit</term>
<term>Interconnection</term>
<term>Light emitting diode</term>
<term>Luminescent material</term>
<term>Microelectronic fabrication</term>
<term>Micromachine</term>
<term>Micromachining</term>
<term>Multiple layer</term>
<term>Performance evaluation</term>
<term>Stacking</term>
<term>Temperature measurement</term>
<term>Ternary compound</term>
<term>Thermal characteristic</term>
<term>Tunable circuit</term>
<term>White light</term>
<term>Wire bonding</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Circuit accordable</term>
<term>Lumière blanche</term>
<term>Diode électroluminescente</term>
<term>Empilement</term>
<term>Microcâblage</term>
<term>Interconnexion</term>
<term>Microusinage</term>
<term>Micromachine</term>
<term>Température couleur</term>
<term>Evaluation performance</term>
<term>Caractéristique thermique</term>
<term>Mesure température</term>
<term>Matériau luminescent</term>
<term>Multicouche</term>
<term>Oxyde d'aluminium</term>
<term>Composé ternaire</term>
<term>Nitrure de gallium</term>
<term>Nitrure d'indium</term>
<term>Circuit intégré</term>
<term>Fabrication microélectronique</term>
<term>Al2O3</term>
<term>InGaN</term>
</keywords>
</textClass>
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<front><div type="abstract" xml:lang="en">A tightly integrated 3-D RGB light-emitting diode (LED) stack is demonstrated. Chips of identical dimensions are stacked on top of each other, with wire bonds embedded within. This is achieved by integrating laser-micromachined channels onto the sapphire face of InGaN LEDs, serving to accommodate wire bonds from the chip beneath. The resultant structure eliminates leakage of monochromatic light from individual chips, producing optimally mixed emission through the top aperture. The device can emit a wide range of colors and is an efficient phosphor-free white-light LED as well. When emitting at correlated color temperatures (CCTs) of 2362 K, 5999 K, and 7332 K, the device generates ∼20 lm/W, exhibiting performance invariant of CCT. Thermal characteristics of this multilayered device are investigated via infrared thermometry.</div>
</front>
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<fA02 i1="01"><s0>IETDAI</s0>
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<fA05><s2>60</s2>
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<fA06><s2>1</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Color-Tunable and Phosphor-Free White-Light Multilayered Light-Emitting Diodes</s1>
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<fA11 i1="01" i2="1"><s1>CHEUNG (Y. F.)</s1>
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<fA11 i1="02" i2="1"><s1>CHOI (H. W.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Electrical and Electronic Engineering, The University of Hong Kong</s1>
<s2>Hong Kong</s2>
<s3>HKG</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<fA43 i1="01"><s1>INIST</s1>
<s2>222F3</s2>
<s5>354000503716900490</s5>
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<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>21 ref.</s0>
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<fA47 i1="01" i2="1"><s0>13-0118052</s0>
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<fC01 i1="01" l="ENG"><s0>A tightly integrated 3-D RGB light-emitting diode (LED) stack is demonstrated. Chips of identical dimensions are stacked on top of each other, with wire bonds embedded within. This is achieved by integrating laser-micromachined channels onto the sapphire face of InGaN LEDs, serving to accommodate wire bonds from the chip beneath. The resultant structure eliminates leakage of monochromatic light from individual chips, producing optimally mixed emission through the top aperture. The device can emit a wide range of colors and is an efficient phosphor-free white-light LED as well. When emitting at correlated color temperatures (CCTs) of 2362 K, 5999 K, and 7332 K, the device generates ∼20 lm/W, exhibiting performance invariant of CCT. Thermal characteristics of this multilayered device are investigated via infrared thermometry.</s0>
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<fC02 i1="01" i2="X"><s0>001D03F15</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D03F06A</s0>
</fC02>
<fC02 i1="03" i2="X"><s0>001D03F17</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Circuit accordable</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Tunable circuit</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Circuito acordable</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Lumière blanche</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>White light</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Luz blanca</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Diode électroluminescente</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Light emitting diode</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Diodo electroluminescente</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Empilement</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Stacking</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Apilamiento</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Microcâblage</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Wire bonding</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Unión por hilo</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Interconnexion</s0>
<s5>06</s5>
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<fC03 i1="06" i2="X" l="ENG"><s0>Interconnection</s0>
<s5>06</s5>
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<fC03 i1="06" i2="X" l="SPA"><s0>Interconexión</s0>
<s5>06</s5>
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<s5>07</s5>
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<fC03 i1="07" i2="X" l="ENG"><s0>Micromachining</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Micromaquinado</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Micromachine</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Micromachine</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Micromáquina</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Température couleur</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Color temperature</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Temperatura color</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Evaluation performance</s0>
<s5>10</s5>
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<fC03 i1="10" i2="X" l="ENG"><s0>Performance evaluation</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Evaluación prestación</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Caractéristique thermique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Thermal characteristic</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Característica térmica</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Mesure température</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Temperature measurement</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Medida temperatura</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Matériau luminescent</s0>
<s5>22</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Luminescent material</s0>
<s5>22</s5>
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<fC03 i1="13" i2="X" l="SPA"><s0>Material luminescente</s0>
<s5>22</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Multicouche</s0>
<s5>23</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Multiple layer</s0>
<s5>23</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Capa múltiple</s0>
<s5>23</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Oxyde d'aluminium</s0>
<s5>24</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Aluminium oxide</s0>
<s5>24</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Aluminio óxido</s0>
<s5>24</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Composé ternaire</s0>
<s5>25</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Ternary compound</s0>
<s5>25</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Compuesto ternario</s0>
<s5>25</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Nitrure de gallium</s0>
<s5>26</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Gallium nitride</s0>
<s5>26</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Galio nitruro</s0>
<s5>26</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Nitrure d'indium</s0>
<s5>27</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Indium nitride</s0>
<s5>27</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>27</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Circuit intégré</s0>
<s5>46</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Integrated circuit</s0>
<s5>46</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Circuito integrado</s0>
<s5>46</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Fabrication microélectronique</s0>
<s5>47</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Microelectronic fabrication</s0>
<s5>47</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0>
<s5>47</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>Al2O3</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>InGaN</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE"><s0>Dispositif optoélectronique</s0>
<s5>13</s5>
</fC07>
<fC07 i1="01" i2="X" l="ENG"><s0>Optoelectronic device</s0>
<s5>13</s5>
</fC07>
<fC07 i1="01" i2="X" l="SPA"><s0>Dispositivo optoelectrónico</s0>
<s5>13</s5>
</fC07>
<fC07 i1="02" i2="X" l="FRE"><s0>Composé III-VI</s0>
<s5>14</s5>
</fC07>
<fC07 i1="02" i2="X" l="ENG"><s0>III-VI compound</s0>
<s5>14</s5>
</fC07>
<fC07 i1="02" i2="X" l="SPA"><s0>Compuesto III-VI</s0>
<s5>14</s5>
</fC07>
<fC07 i1="03" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>15</s5>
</fC07>
<fC07 i1="03" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>15</s5>
</fC07>
<fC07 i1="03" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>15</s5>
</fC07>
<fN21><s1>091</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Color-Tunable and Phosphor-Free White-Light Multilayered Light-Emitting Diodes

Color-Tunable and Phosphor-Free White-Light Multilayered Light-Emitting Diodes

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri